Comparison of the top-down and bottom-up approach to fabricate nanowire-based Silicon/Germanium heterostructures

Keyphrases

• Molecular Beam Epitaxy 100%
• Nanowires 100%
• SiGe 100%
• Silicon-germanium Heterostructures 100%
• Heterostructure 66%
• Large Array 66%
• Silicon Nanowires (SiNWs) 66%
• Top-down Method 66%
• Superlattice 33%
• Superlattices 33%
• Field-effect Transistors 33%
• Fast Method 33%
• Reactive Ion Etching 33%
• Homogeneous Array 33%
• Ge Concentration 33%
• Electron Beam Lithography 33%
• Colloidal Lithography 33%
• Nanowire Arrays 33%
• Thermoelectric Element 33%
• Colloidal Metal 33%
• Growth Control 33%
• Nanowire Growth 33%
• Vapor-liquid-solid Mechanism 33%
• Vertical Nanowire 33%
• Vapor-liquid-solid 33%
• Sharp Interface 33%
• Chemical Etching 33%
• Growth Process 33%

Material Science

• Heterojunction 100%
• Silicon 100%
• Germanium 100%
• Nanowires 100%
• Molecular Beam Epitaxy 37%
• Superlattice 25%
• Lithography 25%
• Reactive Ion Etching 12%
• Wet Etching 12%
• Field Effect Transistors 12%
• Thermoelectrics 12%

Engineering

• Heterostructures 100%
• Nanowire 100%
• Bottom-Up Approach 100%
• Superlattice 28%
• Field-Effect Transistor 14%
• Lithography 14%
• Ge Concentration 14%
• Common Method 14%
• Growth Process 14%
• Si Nanowires 14%
• Building Block 14%
• Electron Optical Lithography 14%
• Eutectics 14%
• Thermoelectricity 14%