Abstract
InAs epitaxial films have been grown by molecular beam epitaxy on high-resistivity Si (20 Ω cm) substrates for the first time, and transport properties were investigated by Hall effect measurements down to 10 K. The electron mobilities peak at 75 K with a value of 4.5×104 cm2/(V s) in 6.7-μm-thick (n=2.6×1015 cm -3) unintentionally doped layers. It is shown that the temperature dependence of the Hall mobility can be explained by a combined ionized impurity-polar optical phonon scattering model in the thin InAs layers. Despite the existence of a large lattice mismatch, the results are indicative of a high quality material.
Original language | English |
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Pages (from-to) | 562-564 |
Number of pages | 3 |
Journal | Applied Physics Letters |
Volume | 53 |
Issue number | 7 |
DOIs | |
Publication status | Published - 1988 |
Externally published | Yes |