Abstract
In this paper, we present an analysis for treating the spectroscopic ellipsometry response of Si/Ge superlattices (SLs) with embedded Ge dots. Spectroscopic ellipsometry (SE) measurement at room temperature was used to investigate optical and electronic properties of Si/Ge SLs which were grown on silicon (Si) wafers having âŒ
Original language | English |
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Pages (from-to) | 555-559 |
Number of pages | 5 |
Journal | Applied Physics A: Materials Science and Processing |
Volume | 112 |
Issue number | 3 |
DOIs | |
Publication status | Published - Sept 2013 |
Externally published | Yes |