Enhanced electron spin polarization in photoemission from thin GaAs

T. Maruyama, R. Prepost, E. L. Garwin, C. K. Sinclair, B. Dunham, S. Kalem

Research output: Contribution to journalArticlepeer-review

26 Citations (Scopus)

Abstract

The polarization of photoemitted electrons from thin GaAs layers grown by molecular beam epitaxy has been measured. Polarization as high as 49% was observed for a 0.2-μm-thick GaAs sample at excitation photon wavelengths longer than 750 nm. The maximum polarization is dependent on the thickness of the GaAs layer, decreasing to about 41% for a 0.9-μm-thick GaAs sample.

Original languageEnglish
Pages (from-to)1686-1688
Number of pages3
JournalApplied Physics Letters
Volume55
Issue number16
DOIs
Publication statusPublished - 1989
Externally publishedYes

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