Abstract
The polarization of photoemitted electrons from thin GaAs layers grown by molecular beam epitaxy has been measured. Polarization as high as 49% was observed for a 0.2-μm-thick GaAs sample at excitation photon wavelengths longer than 750 nm. The maximum polarization is dependent on the thickness of the GaAs layer, decreasing to about 41% for a 0.9-μm-thick GaAs sample.
Original language | English |
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Pages (from-to) | 1686-1688 |
Number of pages | 3 |
Journal | Applied Physics Letters |
Volume | 55 |
Issue number | 16 |
DOIs | |
Publication status | Published - 1989 |
Externally published | Yes |