Further investigation on the formation mechanisms of (NH                         4                         )                         2                         SiF                         6                          synthesized by dry etching technique

I. Kabacelik; B. Ulug

doi:10.1016/j.apsusc.2007.08.064

Further investigation on the formation mechanisms of (NH ₄ ) ₂ SiF ₆ synthesized by dry etching technique

I. Kabacelik, B. Ulug

Research output: Contribution to journal › Article › peer-review

16 Citations (Scopus)

Abstract

The validity of two formation mechanisms of ammonium silicofluoride (ASF), which are proposed to take place when a silicon surface is exposed to the vapor of HNO ₃ /HF acid mixture is investigated. Of the two proposed mechanisms regarding the synthesis of ASF on silicon surface, validity of the first predicting the release of hydrofluosilicic acid (H ₂ SiF ₆ ) at the intermediate stage is examined by FTIR spectroscopy and the second mechanism suggesting O ₂ release is investigated using the Winkler technique. IR absorbance bands of SiF ₆ ²⁺ are observed on the fresh samples prepared at low (1/100) HNO ₃ /HF volume fractions. No significant amount of oxygen is detected during the synthesis of ASF films on silicon surface by dry etching technique. These two observations together provide firmer support for the validity of the second mechanism.

Original language	English
Pages (from-to)	1870-1873
Number of pages	4
Journal	Applied Surface Science
Volume	254
Issue number	6
DOIs	https://doi.org/10.1016/j.apsusc.2007.08.064
Publication status	Published - 15 Jan 2008
Externally published	Yes

Keywords

Ammonium silicofluoride
Dry etching
FTIR
Hydrofluosilicic acid
Oxygen
Porous silicon

Access to Document

10.1016/j.apsusc.2007.08.064

Cite this

Kabacelik, I., & Ulug, B. (2008). Further investigation on the formation mechanisms of (NH ₄ ) ₂ SiF ₆ synthesized by dry etching technique Applied Surface Science, 254(6), 1870-1873. https://doi.org/10.1016/j.apsusc.2007.08.064

Kabacelik, I. ; Ulug, B. / Further investigation on the formation mechanisms of (NH ₄ ) ₂ SiF ₆ synthesized by dry etching technique In: Applied Surface Science. 2008 ; Vol. 254, No. 6. pp. 1870-1873.

@article{cc6fe4185b1e4bdbb02530746eee24e7,

title = " Further investigation on the formation mechanisms of (NH 4 ) 2 SiF 6 synthesized by dry etching technique ",

abstract = " The validity of two formation mechanisms of ammonium silicofluoride (ASF), which are proposed to take place when a silicon surface is exposed to the vapor of HNO 3 /HF acid mixture is investigated. Of the two proposed mechanisms regarding the synthesis of ASF on silicon surface, validity of the first predicting the release of hydrofluosilicic acid (H 2 SiF 6 ) at the intermediate stage is examined by FTIR spectroscopy and the second mechanism suggesting O 2 release is investigated using the Winkler technique. IR absorbance bands of SiF 6 2+ are observed on the fresh samples prepared at low (1/100) HNO 3 /HF volume fractions. No significant amount of oxygen is detected during the synthesis of ASF films on silicon surface by dry etching technique. These two observations together provide firmer support for the validity of the second mechanism.",

keywords = "Ammonium silicofluoride, Dry etching, FTIR, Hydrofluosilicic acid, Oxygen, Porous silicon",

author = "I. Kabacelik and B. Ulug",

year = "2008",

month = jan,

day = "15",

doi = "10.1016/j.apsusc.2007.08.064",

language = "English",

volume = "254",

pages = "1870--1873",

journal = "Applied Surface Science",

issn = "0169-4332",

publisher = "Elsevier B.V.",

number = "6",

}

Kabacelik, I & Ulug, B 2008, ' Further investigation on the formation mechanisms of (NH ₄ ) ₂ SiF ₆ synthesized by dry etching technique ', Applied Surface Science, vol. 254, no. 6, pp. 1870-1873. https://doi.org/10.1016/j.apsusc.2007.08.064

Further investigation on the formation mechanisms of (NH ₄ ) ₂ SiF ₆ synthesized by dry etching technique . / Kabacelik, I.; Ulug, B.
In: Applied Surface Science, Vol. 254, No. 6, 15.01.2008, p. 1870-1873.

Research output: Contribution to journal › Article › peer-review

TY - JOUR

T1 - Further investigation on the formation mechanisms of (NH 4 ) 2 SiF 6 synthesized by dry etching technique

AU - Kabacelik, I.

AU - Ulug, B.

PY - 2008/1/15

Y1 - 2008/1/15

N2 - The validity of two formation mechanisms of ammonium silicofluoride (ASF), which are proposed to take place when a silicon surface is exposed to the vapor of HNO 3 /HF acid mixture is investigated. Of the two proposed mechanisms regarding the synthesis of ASF on silicon surface, validity of the first predicting the release of hydrofluosilicic acid (H 2 SiF 6 ) at the intermediate stage is examined by FTIR spectroscopy and the second mechanism suggesting O 2 release is investigated using the Winkler technique. IR absorbance bands of SiF 6 2+ are observed on the fresh samples prepared at low (1/100) HNO 3 /HF volume fractions. No significant amount of oxygen is detected during the synthesis of ASF films on silicon surface by dry etching technique. These two observations together provide firmer support for the validity of the second mechanism.

AB - The validity of two formation mechanisms of ammonium silicofluoride (ASF), which are proposed to take place when a silicon surface is exposed to the vapor of HNO 3 /HF acid mixture is investigated. Of the two proposed mechanisms regarding the synthesis of ASF on silicon surface, validity of the first predicting the release of hydrofluosilicic acid (H 2 SiF 6 ) at the intermediate stage is examined by FTIR spectroscopy and the second mechanism suggesting O 2 release is investigated using the Winkler technique. IR absorbance bands of SiF 6 2+ are observed on the fresh samples prepared at low (1/100) HNO 3 /HF volume fractions. No significant amount of oxygen is detected during the synthesis of ASF films on silicon surface by dry etching technique. These two observations together provide firmer support for the validity of the second mechanism.

KW - Ammonium silicofluoride

KW - Dry etching

KW - FTIR

KW - Hydrofluosilicic acid

KW - Oxygen

KW - Porous silicon

UR - http://www.scopus.com/inward/record.url?scp=37349104697&partnerID=8YFLogxK

U2 - 10.1016/j.apsusc.2007.08.064

DO - 10.1016/j.apsusc.2007.08.064

M3 - Article

AN - SCOPUS:37349104697

SN - 0169-4332

VL - 254

SP - 1870

EP - 1873

JO - Applied Surface Science

JF - Applied Surface Science

IS - 6

ER -

Kabacelik I, Ulug B. Further investigation on the formation mechanisms of (NH ₄ ) ₂ SiF ₆ synthesized by dry etching technique Applied Surface Science. 2008 Jan 15;254(6):1870-1873. doi: 10.1016/j.apsusc.2007.08.064

Further investigation on the formation mechanisms of (NH ₄ ) ₂ SiF ₆ synthesized by dry etching technique

Abstract

Keywords

Access to Document

Other files and links

Fingerprint

Cite this