Abstract
We observed a clear excitonic absorption effect at room temperature in MBE-grown Ga In s/GaAs strained layer multiple quantum well structures, and fabricated optical pin modulators on the same structures. A change of 27% in the transmission, corresponding to a change in the absorption coefficient of 2260 cm"1, with 6 V reverse bias voltage and at 9710 A wavelength, was measured. We also operated the modulator as a self-electro-optic effect device, resulting in a nonlinear optical input/output characteristic.
Original language | English |
---|---|
Pages (from-to) | 295-297 |
Number of pages | 3 |
Journal | Electronics Letters |
Volume | 24 |
Issue number | 5 |
DOIs | |
Publication status | Published - 1988 |
Externally published | Yes |
Keywords
- Electro-optics
- Optical modulation
- Semiconductor devices and materials