GaInAs/GaAs Strained Layer MQW Electroabsorption Optical Modulator and Self-Electro-Optic Effect Device

W. Dobbelaere, S. Kalem, D. Huang, M. S. Unlu, H. Morkoc

Research output: Contribution to journalArticlepeer-review

15 Citations (Scopus)

Abstract

We observed a clear excitonic absorption effect at room temperature in MBE-grown Ga In s/GaAs strained layer multiple quantum well structures, and fabricated optical pin modulators on the same structures. A change of 27% in the transmission, corresponding to a change in the absorption coefficient of 2260 cm"1, with 6 V reverse bias voltage and at 9710 A wavelength, was measured. We also operated the modulator as a self-electro-optic effect device, resulting in a nonlinear optical input/output characteristic.

Original languageEnglish
Pages (from-to)295-297
Number of pages3
JournalElectronics Letters
Volume24
Issue number5
DOIs
Publication statusPublished - 1988
Externally publishedYes

Keywords

  • Electro-optics
  • Optical modulation
  • Semiconductor devices and materials

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