Galnas/gaas multiple quantum well reflection modulators

W. Dobbelaere, D. Huang, S. Kalem, H. Morkoç

Research output: Contribution to journalArticlepeer-review

7 Citations (Scopus)

Abstract

We demonstrate a pin reflection modulator consisting of a 50-period strained layer Ga0.8JIn0.15As/GaAs multiple quantum well and a 5-period AlAs/GaAs quarter-wave stack dielectric mirror, grown on a GaAs substrate by molecular beam epitaxy. We observed a relative change in the reflectivity of the modulator of 12% with 4.5 V reverse bias voltage and at 0.996 μm wavelength.

Original languageEnglish
Pages (from-to)1239-1241
Number of pages3
JournalElectronics Letters
Volume24
Issue number19
DOIs
Publication statusPublished - 1988
Externally publishedYes

Keywords

  • Modulators
  • Optical modulation
  • Optoelectronics
  • Semiconductor devices and materials

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