Abstract
We demonstrate a pin reflection modulator consisting of a 50-period strained layer Ga0.8JIn0.15As/GaAs multiple quantum well and a 5-period AlAs/GaAs quarter-wave stack dielectric mirror, grown on a GaAs substrate by molecular beam epitaxy. We observed a relative change in the reflectivity of the modulator of 12% with 4.5 V reverse bias voltage and at 0.996 μm wavelength.
Original language | English |
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Pages (from-to) | 1239-1241 |
Number of pages | 3 |
Journal | Electronics Letters |
Volume | 24 |
Issue number | 19 |
DOIs | |
Publication status | Published - 1988 |
Externally published | Yes |
Keywords
- Modulators
- Optical modulation
- Optoelectronics
- Semiconductor devices and materials