Influence of high electron concentration on band gap and effective electron mass of InN

O. Donmez; M. Yilmaz; A. Erol; B. Ulug; M. C. Arikan; A. Ulug; A. O. Ajagunna; E. Iliopoulos; A. Georgakilas

doi:10.1002/pssb.201000780

Influence of high electron concentration on band gap and effective electron mass of InN

O. Donmez, M. Yilmaz, A. Erol, B. Ulug, M. C. Arikan, A. Ulug, A. O. Ajagunna, E. Iliopoulos, A. Georgakilas

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8 Citations (Scopus)

Abstract

Effects of high electron concentration on the band gap energy of InN films having different layer thicknesses as 600 and 800nm are investigated experimentally and theoretically. Electron concentrations of the samples are obtained through the Hall measurements accomplished between 77K and room temperature. Optical characterization of the samples is carried out using the photoluminescence (PL) measurements and the observed PL spectra are explained considering the high electron concentration related effects, i.e. Burstein-Moss shift, band renormalization and band tailing in non-parabolic k·p model. Extracted PL results indicate that the samples have approximately 0.685eV band gap energy at 77K. Effective mass of the carriers, which is calculated as 0.097m₀ for electron concentration of ∼10¹⁹cm^-3, are also observed to be influenced by the high carrier concentration.

Original language	English
Pages (from-to)	1172-1175
Number of pages	4
Journal	Physica Status Solidi (B) Basic Research
Volume	248
Issue number	5
DOIs	https://doi.org/10.1002/pssb.201000780
Publication status	Published - May 2011
Externally published	Yes

Keywords

Band renormalization
Band tailing
Burstein-Moss effect
InN
Kane's model
Non-parabolic k·p model

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10.1002/pssb.201000780

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title = "Influence of high electron concentration on band gap and effective electron mass of InN",

abstract = "Effects of high electron concentration on the band gap energy of InN films having different layer thicknesses as 600 and 800nm are investigated experimentally and theoretically. Electron concentrations of the samples are obtained through the Hall measurements accomplished between 77K and room temperature. Optical characterization of the samples is carried out using the photoluminescence (PL) measurements and the observed PL spectra are explained considering the high electron concentration related effects, i.e. Burstein-Moss shift, band renormalization and band tailing in non-parabolic k·p model. Extracted PL results indicate that the samples have approximately 0.685eV band gap energy at 77K. Effective mass of the carriers, which is calculated as 0.097m0 for electron concentration of ∼1019cm-3, are also observed to be influenced by the high carrier concentration.",

keywords = "Band renormalization, Band tailing, Burstein-Moss effect, InN, Kane's model, Non-parabolic k·p model",

author = "O. Donmez and M. Yilmaz and A. Erol and B. Ulug and Arikan, {M. C.} and A. Ulug and Ajagunna, {A. O.} and E. Iliopoulos and A. Georgakilas",

year = "2011",

month = may,

doi = "10.1002/pssb.201000780",

language = "English",

volume = "248",

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journal = "Physica Status Solidi (B) Basic Research",

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T1 - Influence of high electron concentration on band gap and effective electron mass of InN

AU - Donmez, O.

AU - Yilmaz, M.

AU - Erol, A.

AU - Ulug, B.

AU - Arikan, M. C.

AU - Ulug, A.

AU - Ajagunna, A. O.

AU - Iliopoulos, E.

AU - Georgakilas, A.

PY - 2011/5

Y1 - 2011/5

N2 - Effects of high electron concentration on the band gap energy of InN films having different layer thicknesses as 600 and 800nm are investigated experimentally and theoretically. Electron concentrations of the samples are obtained through the Hall measurements accomplished between 77K and room temperature. Optical characterization of the samples is carried out using the photoluminescence (PL) measurements and the observed PL spectra are explained considering the high electron concentration related effects, i.e. Burstein-Moss shift, band renormalization and band tailing in non-parabolic k·p model. Extracted PL results indicate that the samples have approximately 0.685eV band gap energy at 77K. Effective mass of the carriers, which is calculated as 0.097m0 for electron concentration of ∼1019cm-3, are also observed to be influenced by the high carrier concentration.

AB - Effects of high electron concentration on the band gap energy of InN films having different layer thicknesses as 600 and 800nm are investigated experimentally and theoretically. Electron concentrations of the samples are obtained through the Hall measurements accomplished between 77K and room temperature. Optical characterization of the samples is carried out using the photoluminescence (PL) measurements and the observed PL spectra are explained considering the high electron concentration related effects, i.e. Burstein-Moss shift, band renormalization and band tailing in non-parabolic k·p model. Extracted PL results indicate that the samples have approximately 0.685eV band gap energy at 77K. Effective mass of the carriers, which is calculated as 0.097m0 for electron concentration of ∼1019cm-3, are also observed to be influenced by the high carrier concentration.

KW - Band renormalization

KW - Band tailing

KW - Burstein-Moss effect

KW - InN

KW - Kane's model

KW - Non-parabolic k·p model

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DO - 10.1002/pssb.201000780

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VL - 248

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JO - Physica Status Solidi (B) Basic Research

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IS - 5

ER -

Influence of high electron concentration on band gap and effective electron mass of InN

Abstract

Keywords

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