Infrared photoluminescence of InAs epilayers grown on GaAs and Si substrates

Robert D. Grober, H. D. Drew, Jen Inn Chyi, S. Kalem, H. Morkoç

Research output: Contribution to journalArticlepeer-review

51 Citations (Scopus)

Abstract

We report the results of infrared photoluminescence and optical transmission measurements of InAs epilayers grown on both Si and GaAs substrates. Photoluminescence reveals four well-defined peaks associated with band-to-band transitions and impurity/defect associated transitions. The spectra of the epilayers grown on Si are red shifted by roughly 15 meV relative to that of the epilayers grown on GaAs. In addition, optical transmission measurements reveal two intrinsic absorption edges for the epilayers grown on Si. These data are interpreted in terms of biaxial strain induced between the epilayer and the substrate due to differing indices of linear thermal expansion.

Original languageEnglish
Pages (from-to)4079-4081
Number of pages3
JournalJournal of Applied Physics
Volume65
Issue number10
DOIs
Publication statusPublished - 1989
Externally publishedYes

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