Inhibition of negative differential resistance in modulation-doped n -type Gax In1-x Ny As1-y GaAs quantum wells

Y. Sun; M. P. Vaughan; A. Agarwal; M. Yilmaz; B. Ulug; A. Ulug; N. Balkan; M. Sopanen; O. Reentilä; M. Mattila; C. Fontaine; A. Arnoult

doi:10.1103/PhysRevB.75.205316

Inhibition of negative differential resistance in modulation-doped n -type Gax In1-x Ny As1-y GaAs quantum wells

Y. Sun, M. P. Vaughan, A. Agarwal, M. Yilmaz, B. Ulug, A. Ulug, N. Balkan, M. Sopanen, O. Reentilä, M. Mattila, C. Fontaine, A. Arnoult

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12 Citations (Scopus)

Abstract

We present the results of hot-electron momentum relaxation studies for longitudinal transport in modulation doped Gax In1-x Ny As1-y GaAs quantum wells. Experimental results show that the high field drift velocity saturates at a value close to 1× 107 cm s with no evidence for negative differential resistance or instabilities. Experimental results are compared with a simple theoretical model for transport taking into account the effect of nonequilibrium phonon production. Model calculations indicate that enhanced momentum scattering for electrons with nondrifting hot phonons may be the cause for the reduction in drift velocity.

Original language	English
Article number	205316
Journal	Physical Review B - Condensed Matter and Materials Physics
Volume	75
Issue number	20
DOIs	https://doi.org/10.1103/PhysRevB.75.205316
Publication status	Published - 11 May 2007
Externally published	Yes

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10.1103/PhysRevB.75.205316

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Sun, Y., Vaughan, M. P., Agarwal, A., Yilmaz, M., Ulug, B., Ulug, A., Balkan, N., Sopanen, M., Reentilä, O., Mattila, M., Fontaine, C., & Arnoult, A. (2007). Inhibition of negative differential resistance in modulation-doped n -type Gax In1-x Ny As1-y GaAs quantum wells. Physical Review B - Condensed Matter and Materials Physics, 75(20), Article 205316. https://doi.org/10.1103/PhysRevB.75.205316

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title = "Inhibition of negative differential resistance in modulation-doped n -type Gax In1-x Ny As1-y GaAs quantum wells",

abstract = "We present the results of hot-electron momentum relaxation studies for longitudinal transport in modulation doped Gax In1-x Ny As1-y GaAs quantum wells. Experimental results show that the high field drift velocity saturates at a value close to 1× 107 cm s with no evidence for negative differential resistance or instabilities. Experimental results are compared with a simple theoretical model for transport taking into account the effect of nonequilibrium phonon production. Model calculations indicate that enhanced momentum scattering for electrons with nondrifting hot phonons may be the cause for the reduction in drift velocity.",

author = "Y. Sun and Vaughan, {M. P.} and A. Agarwal and M. Yilmaz and B. Ulug and A. Ulug and N. Balkan and M. Sopanen and O. Reentil{\"a} and M. Mattila and C. Fontaine and A. Arnoult",

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doi = "10.1103/PhysRevB.75.205316",

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Sun, Y, Vaughan, MP, Agarwal, A, Yilmaz, M, Ulug, B, Ulug, A, Balkan, N, Sopanen, M, Reentilä, O, Mattila, M, Fontaine, C & Arnoult, A 2007, 'Inhibition of negative differential resistance in modulation-doped n -type Gax In1-x Ny As1-y GaAs quantum wells', Physical Review B - Condensed Matter and Materials Physics, vol. 75, no. 20, 205316. https://doi.org/10.1103/PhysRevB.75.205316

TY - JOUR

T1 - Inhibition of negative differential resistance in modulation-doped n -type Gax In1-x Ny As1-y GaAs quantum wells

AU - Sun, Y.

AU - Vaughan, M. P.

AU - Agarwal, A.

AU - Yilmaz, M.

AU - Ulug, B.

AU - Ulug, A.

AU - Balkan, N.

AU - Sopanen, M.

AU - Reentilä, O.

AU - Mattila, M.

AU - Fontaine, C.

AU - Arnoult, A.

PY - 2007/5/11

Y1 - 2007/5/11

N2 - We present the results of hot-electron momentum relaxation studies for longitudinal transport in modulation doped Gax In1-x Ny As1-y GaAs quantum wells. Experimental results show that the high field drift velocity saturates at a value close to 1× 107 cm s with no evidence for negative differential resistance or instabilities. Experimental results are compared with a simple theoretical model for transport taking into account the effect of nonequilibrium phonon production. Model calculations indicate that enhanced momentum scattering for electrons with nondrifting hot phonons may be the cause for the reduction in drift velocity.

AB - We present the results of hot-electron momentum relaxation studies for longitudinal transport in modulation doped Gax In1-x Ny As1-y GaAs quantum wells. Experimental results show that the high field drift velocity saturates at a value close to 1× 107 cm s with no evidence for negative differential resistance or instabilities. Experimental results are compared with a simple theoretical model for transport taking into account the effect of nonequilibrium phonon production. Model calculations indicate that enhanced momentum scattering for electrons with nondrifting hot phonons may be the cause for the reduction in drift velocity.

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VL - 75

JO - Physical Review B - Condensed Matter and Materials Physics

JF - Physical Review B - Condensed Matter and Materials Physics

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M1 - 205316

ER -

Inhibition of negative differential resistance in modulation-doped n -type Gax In1-x Ny As1-y GaAs quantum wells

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