Lead-free ferroelectric BaTİO3 (BTO) thin films produced by the green process

I. H. Mutlu; P. Colkesen; B. Ulug; A. Tumbul

doi:10.1016/j.kjs.2023.06.001

Lead-free ferroelectric BaTİO₃ (BTO) thin films produced by the green process

I. H. Mutlu
, P. Colkesen
, B. Ulug
, A. Tumbul

Electrical Electronics Engineering

Research output: Contribution to journal › Article › peer-review

2 Citations (Scopus)

Abstract

In this study, we present structural and dielectric properties of doped and un-doped BaTiO₃ (BTO) thin films samples. BTO sample were produced by non-vacuum process specifically sol-gel spin coating technique. The doped samples involve Co, Gd, Mn, Sr, and Zr in the Ba-site of the BTO. We used SEM, XRD and AFM analysis techniques to characterized our samples. We also conduct a dielectric measurement using a Vector Network Analyzer. According to our findings the highest dielectric constants were observed for Sr and Zr doped BaTiO₃ thin films which were not applied any heat treatment and were obtained as 9.25 and 9.4 at 5.4 GHz frequency, respectively. On the other hand, the value of dielectric constants of the films that were analyzed after heat treatment were determined as 7.7 and 7.45 at 6.8 GHz on Sr and Zr doped BaTiO₃ thin films, respectively.

Original language	English
Pages (from-to)	539-544
Number of pages	6
Journal	Kuwait Journal of Science
Volume	50
Issue number	4
DOIs	https://doi.org/10.1016/j.kjs.2023.06.001
Publication status	Published - Oct 2023

Keywords

BTO thin Film
Dielectric properties
Lead-free ferroelectrics
Sol-gel process

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10.1016/j.kjs.2023.06.001

Cite this

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title = "Lead-free ferroelectric BaTİO3 (BTO) thin films produced by the green process",

abstract = "In this study, we present structural and dielectric properties of doped and un-doped BaTiO3 (BTO) thin films samples. BTO sample were produced by non-vacuum process specifically sol-gel spin coating technique. The doped samples involve Co, Gd, Mn, Sr, and Zr in the Ba-site of the BTO. We used SEM, XRD and AFM analysis techniques to characterized our samples. We also conduct a dielectric measurement using a Vector Network Analyzer. According to our findings the highest dielectric constants were observed for Sr and Zr doped BaTiO3 thin films which were not applied any heat treatment and were obtained as 9.25 and 9.4 at 5.4 GHz frequency, respectively. On the other hand, the value of dielectric constants of the films that were analyzed after heat treatment were determined as 7.7 and 7.45 at 6.8 GHz on Sr and Zr doped BaTiO3 thin films, respectively.",

keywords = "BTO thin Film, Dielectric properties, Lead-free ferroelectrics, Sol-gel process",

author = "Mutlu, \{I. H.\} and P. Colkesen and B. Ulug and A. Tumbul",

note = "Publisher Copyright: {\textcopyright} 2023 The Author(s)",

year = "2023",

month = oct,

doi = "10.1016/j.kjs.2023.06.001",

language = "English",

volume = "50",

pages = "539--544",

journal = "Kuwait Journal of Science",

issn = "2307-4108",

publisher = "Elsevier B.V.",

number = "4",

}

TY - JOUR

T1 - Lead-free ferroelectric BaTİO3 (BTO) thin films produced by the green process

AU - Mutlu, I. H.

AU - Colkesen, P.

AU - Ulug, B.

AU - Tumbul, A.

PY - 2023/10

Y1 - 2023/10

N2 - In this study, we present structural and dielectric properties of doped and un-doped BaTiO3 (BTO) thin films samples. BTO sample were produced by non-vacuum process specifically sol-gel spin coating technique. The doped samples involve Co, Gd, Mn, Sr, and Zr in the Ba-site of the BTO. We used SEM, XRD and AFM analysis techniques to characterized our samples. We also conduct a dielectric measurement using a Vector Network Analyzer. According to our findings the highest dielectric constants were observed for Sr and Zr doped BaTiO3 thin films which were not applied any heat treatment and were obtained as 9.25 and 9.4 at 5.4 GHz frequency, respectively. On the other hand, the value of dielectric constants of the films that were analyzed after heat treatment were determined as 7.7 and 7.45 at 6.8 GHz on Sr and Zr doped BaTiO3 thin films, respectively.

AB - In this study, we present structural and dielectric properties of doped and un-doped BaTiO3 (BTO) thin films samples. BTO sample were produced by non-vacuum process specifically sol-gel spin coating technique. The doped samples involve Co, Gd, Mn, Sr, and Zr in the Ba-site of the BTO. We used SEM, XRD and AFM analysis techniques to characterized our samples. We also conduct a dielectric measurement using a Vector Network Analyzer. According to our findings the highest dielectric constants were observed for Sr and Zr doped BaTiO3 thin films which were not applied any heat treatment and were obtained as 9.25 and 9.4 at 5.4 GHz frequency, respectively. On the other hand, the value of dielectric constants of the films that were analyzed after heat treatment were determined as 7.7 and 7.45 at 6.8 GHz on Sr and Zr doped BaTiO3 thin films, respectively.

KW - BTO thin Film

KW - Dielectric properties

KW - Lead-free ferroelectrics

KW - Sol-gel process

UR - https://www.scopus.com/pages/publications/85173964881

U2 - 10.1016/j.kjs.2023.06.001

DO - 10.1016/j.kjs.2023.06.001

M3 - Article

AN - SCOPUS:85173964881

SN - 2307-4108

VL - 50

SP - 539

EP - 544

JO - Kuwait Journal of Science

JF - Kuwait Journal of Science

IS - 4

ER -

Lead-free ferroelectric BaTİO₃ (BTO) thin films produced by the green process

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Keywords

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