Low-temperature photoluminescence in SiGe single quantum wells

S. Kalem, T. Curtis, W. B. De Boer, G. E. Stillman

Research output: Contribution to journalArticlepeer-review

6 Citations (Scopus)

Abstract

We have investigated the low-temperature photoluminescence properties of n-type modulation doped Si1-xGex single quantum wells (x = 0.19) grown by rapid thermal chemical vapor deposition at 625°C. A well-resolved strong excitonic luminescence with TO-phonon and no-phonon transitions with a full width at half-maximum as low as 6 meV is observed for a quantum well of 98 Å. The photoluminescence emission shows a significant blue shift and a broadening with excitation intensity. The results are analysed in terms of localization of photoinduced charge carriers at the heterointerfaces.

Original languageEnglish
Pages (from-to)23-27
Number of pages5
JournalApplied Physics A: Materials Science and Processing
Volume66
Issue number1
DOIs
Publication statusPublished - 1998
Externally publishedYes

Fingerprint

Dive into the research topics of 'Low-temperature photoluminescence in SiGe single quantum wells'. Together they form a unique fingerprint.

Cite this