Abstract
We have investigated the low-temperature photoluminescence properties of n-type modulation doped Si1-xGex single quantum wells (x = 0.19) grown by rapid thermal chemical vapor deposition at 625°C. A well-resolved strong excitonic luminescence with TO-phonon and no-phonon transitions with a full width at half-maximum as low as 6 meV is observed for a quantum well of 98 Å. The photoluminescence emission shows a significant blue shift and a broadening with excitation intensity. The results are analysed in terms of localization of photoinduced charge carriers at the heterointerfaces.
Original language | English |
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Pages (from-to) | 23-27 |
Number of pages | 5 |
Journal | Applied Physics A: Materials Science and Processing |
Volume | 66 |
Issue number | 1 |
DOIs | |
Publication status | Published - 1998 |
Externally published | Yes |