Optical and electrical properties of modulation-doped n and p-type Ga x In 1-x N y As 1-y /GaAs quantum wells for 1.3 μm laser applications

Y. Sun; A. Erol; M. Yilmaz; M. C. Arikan; B. Ulug; A. Ulug; N. Balkan; M. Sopanen; O. Reentilä; M. Mattila; C. Fontaine; A. Arnoult

doi:10.1007/s11082-007-9163-8

Optical and electrical properties of modulation-doped n and p-type Ga _x In _1-x N _y As _1-y /GaAs quantum wells for 1.3 μm laser applications

Y. Sun, A. Erol, M. Yilmaz, M. C. Arikan, B. Ulug, A. Ulug, N. Balkan, M. Sopanen, O. Reentilä, M. Mattila, C. Fontaine, A. Arnoult

Research output: Contribution to journal › Article › peer-review

14 Citations (Scopus)

Abstract

We present a comprehensive study of spectral photoluminescence (PL), photoconductivity and Hall mobility in undoped, n and p-type modulation-doped quantum wells of Ga _1-x In _x N _y As _1-y /GaAs with varying nitrogen concentration. We show that the increasing nitrogen composition red shifts the energy gap and this red shift is accompanied with a reduction of the 2D electron mobility in the quantum wells. True temperature dependence of the band gap, free from errors associated with nitrogen induced exciton trapping effects, is observed because in the modulation doped QW samples PL emission is dominated by band-to-band recombination and the S-shape temperature dependence is eliminated. Excellent fit to semi-experimental Varshni equation is obtained and the temperature dependence of the band gap in the linear regime (dE/dT) is tabulated as a function of nitrogen concentration and the type of dopant.

Original language	English
Pages (from-to)	467-474
Number of pages	8
Journal	Optical and Quantum Electronics
Volume	40
Issue number	7
DOIs	https://doi.org/10.1007/s11082-007-9163-8
Publication status	Published - May 2008
Externally published	Yes

Keywords

Dilute nitrides
GaInNAs

Access to Document

10.1007/s11082-007-9163-8

Cite this

Sun, Y., Erol, A., Yilmaz, M., Arikan, M. C., Ulug, B., Ulug, A., Balkan, N., Sopanen, M., Reentilä, O., Mattila, M., Fontaine, C., & Arnoult, A. (2008). Optical and electrical properties of modulation-doped n and p-type Ga _x In _1-x N _y As _1-y /GaAs quantum wells for 1.3 μm laser applications. Optical and Quantum Electronics, 40(7), 467-474. https://doi.org/10.1007/s11082-007-9163-8

@article{a0bab0748a4e4919855db275562371e4,

title = "Optical and electrical properties of modulation-doped n and p-type Ga x In 1-x N y As 1-y /GaAs quantum wells for 1.3 μm laser applications",

abstract = "We present a comprehensive study of spectral photoluminescence (PL), photoconductivity and Hall mobility in undoped, n and p-type modulation-doped quantum wells of Ga 1-x In x N y As 1-y /GaAs with varying nitrogen concentration. We show that the increasing nitrogen composition red shifts the energy gap and this red shift is accompanied with a reduction of the 2D electron mobility in the quantum wells. True temperature dependence of the band gap, free from errors associated with nitrogen induced exciton trapping effects, is observed because in the modulation doped QW samples PL emission is dominated by band-to-band recombination and the S-shape temperature dependence is eliminated. Excellent fit to semi-experimental Varshni equation is obtained and the temperature dependence of the band gap in the linear regime (dE/dT) is tabulated as a function of nitrogen concentration and the type of dopant.",

keywords = "Dilute nitrides, GaInNAs",

author = "Y. Sun and A. Erol and M. Yilmaz and Arikan, {M. C.} and B. Ulug and A. Ulug and N. Balkan and M. Sopanen and O. Reentil{\"a} and M. Mattila and C. Fontaine and A. Arnoult",

year = "2008",

month = may,

doi = "10.1007/s11082-007-9163-8",

language = "English",

volume = "40",

pages = "467--474",

journal = "Optical and Quantum Electronics",

issn = "0306-8919",

publisher = "Springer",

number = "7",

}

Sun, Y, Erol, A, Yilmaz, M, Arikan, MC, Ulug, B, Ulug, A, Balkan, N, Sopanen, M, Reentilä, O, Mattila, M, Fontaine, C & Arnoult, A 2008, 'Optical and electrical properties of modulation-doped n and p-type Ga _x In _1-x N _y As _1-y /GaAs quantum wells for 1.3 μm laser applications', Optical and Quantum Electronics, vol. 40, no. 7, pp. 467-474. https://doi.org/10.1007/s11082-007-9163-8

TY - JOUR

T1 - Optical and electrical properties of modulation-doped n and p-type Ga x In 1-x N y As 1-y /GaAs quantum wells for 1.3 μm laser applications

AU - Sun, Y.

AU - Erol, A.

AU - Yilmaz, M.

AU - Arikan, M. C.

AU - Ulug, B.

AU - Ulug, A.

AU - Balkan, N.

AU - Sopanen, M.

AU - Reentilä, O.

AU - Mattila, M.

AU - Fontaine, C.

AU - Arnoult, A.

PY - 2008/5

Y1 - 2008/5

N2 - We present a comprehensive study of spectral photoluminescence (PL), photoconductivity and Hall mobility in undoped, n and p-type modulation-doped quantum wells of Ga 1-x In x N y As 1-y /GaAs with varying nitrogen concentration. We show that the increasing nitrogen composition red shifts the energy gap and this red shift is accompanied with a reduction of the 2D electron mobility in the quantum wells. True temperature dependence of the band gap, free from errors associated with nitrogen induced exciton trapping effects, is observed because in the modulation doped QW samples PL emission is dominated by band-to-band recombination and the S-shape temperature dependence is eliminated. Excellent fit to semi-experimental Varshni equation is obtained and the temperature dependence of the band gap in the linear regime (dE/dT) is tabulated as a function of nitrogen concentration and the type of dopant.

AB - We present a comprehensive study of spectral photoluminescence (PL), photoconductivity and Hall mobility in undoped, n and p-type modulation-doped quantum wells of Ga 1-x In x N y As 1-y /GaAs with varying nitrogen concentration. We show that the increasing nitrogen composition red shifts the energy gap and this red shift is accompanied with a reduction of the 2D electron mobility in the quantum wells. True temperature dependence of the band gap, free from errors associated with nitrogen induced exciton trapping effects, is observed because in the modulation doped QW samples PL emission is dominated by band-to-band recombination and the S-shape temperature dependence is eliminated. Excellent fit to semi-experimental Varshni equation is obtained and the temperature dependence of the band gap in the linear regime (dE/dT) is tabulated as a function of nitrogen concentration and the type of dopant.

KW - Dilute nitrides

KW - GaInNAs

UR - http://www.scopus.com/inward/record.url?scp=54849205900&partnerID=8YFLogxK

U2 - 10.1007/s11082-007-9163-8

DO - 10.1007/s11082-007-9163-8

M3 - Article

AN - SCOPUS:54849205900

SN - 0306-8919

VL - 40

SP - 467

EP - 474

JO - Optical and Quantum Electronics

JF - Optical and Quantum Electronics

IS - 7

ER -

Optical and electrical properties of modulation-doped n and p-type Ga _x In _1-x N _y As _1-y /GaAs quantum wells for 1.3 μm laser applications

Abstract

Keywords

Access to Document

Other files and links

Fingerprint

Cite this