Optical and structural investigation of stain-etched silicon

Ş Kalem, M. Rosenbauer

Research output: Contribution to journalArticlepeer-review

38 Citations (Scopus)

Abstract

We report on optical and vibrational properties of porous silicon (por-Si) layers grown on p-type Si wafers by electroless etching technique. The results indicate a correlation between the photoluminescence (PL) intensity and the multihydride complexes (SiHn with n≥2). However, similar correlation was also found for monohydride species from the layers containing no multihydrides. It is shown that the increase in the amount of oxidation is responsible for broadening of the PL emission band. Furthermore, a new IR absorption band is observed at 710 cm-1 and assigned to multihydrides suggesting a new local bonding environment for hydrogen atoms in these layers.

Original languageEnglish
Pages (from-to)2551
Number of pages1
JournalApplied Physics Letters
Volume67
DOIs
Publication statusPublished - 1994
Externally publishedYes

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