Photoluminescence in n and p modulation-doped GaInNAs/GaAs quantum wells

M. Yilmaz; Y. Sun; N. Balkan; B. Ulug; A. Ulug; M. Sopanen; O. Reentilä; M. Mattila; C. Fontaine; A. Arnoult

doi:10.1016/j.mejo.2008.06.003

Photoluminescence in n and p modulation-doped GaInNAs/GaAs quantum wells

M. Yilmaz, Y. Sun, N. Balkan, B. Ulug, A. Ulug, M. Sopanen, O. Reentilä, M. Mattila, C. Fontaine, A. Arnoult

Research output: Contribution to journal › Article › peer-review

5 Citations (Scopus)

Abstract

Experimental results concerning the steady-state photoluminescence (PL) studies in n and p modulation doped and undoped GaInNAs/GaAs quantum wells are presented. The effects of modulation, type of doping and nitrogen concentration on the PL and the temperature dependence of the band gap, carrier localization and non-radiative recombination are investigated. Increasing the nitrogen composition decreases energy band gap as expected. The n-type modulation doping eliminates most of the defect-related effects and blue shifts the energy band gap. However, the p-type doping gives rise to additional features in the PL spectra and red shifts energy band gap further compared to the n-type-doped material.

Original language	English
Pages (from-to)	406-409
Number of pages	4
Journal	Microelectronics Journal
Volume	40
Issue number	3
DOIs	https://doi.org/10.1016/j.mejo.2008.06.003
Publication status	Published - Mar 2009
Externally published	Yes

Keywords

GaInNAs/GaAs QWs
Modulation doping
Photoluminescence

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10.1016/j.mejo.2008.06.003

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title = "Photoluminescence in n and p modulation-doped GaInNAs/GaAs quantum wells",

abstract = "Experimental results concerning the steady-state photoluminescence (PL) studies in n and p modulation doped and undoped GaInNAs/GaAs quantum wells are presented. The effects of modulation, type of doping and nitrogen concentration on the PL and the temperature dependence of the band gap, carrier localization and non-radiative recombination are investigated. Increasing the nitrogen composition decreases energy band gap as expected. The n-type modulation doping eliminates most of the defect-related effects and blue shifts the energy band gap. However, the p-type doping gives rise to additional features in the PL spectra and red shifts energy band gap further compared to the n-type-doped material.",

keywords = "GaInNAs/GaAs QWs, Modulation doping, Photoluminescence",

author = "M. Yilmaz and Y. Sun and N. Balkan and B. Ulug and A. Ulug and M. Sopanen and O. Reentil{\"a} and M. Mattila and C. Fontaine and A. Arnoult",

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doi = "10.1016/j.mejo.2008.06.003",

language = "English",

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T1 - Photoluminescence in n and p modulation-doped GaInNAs/GaAs quantum wells

AU - Yilmaz, M.

AU - Sun, Y.

AU - Balkan, N.

AU - Ulug, B.

AU - Ulug, A.

AU - Sopanen, M.

AU - Reentilä, O.

AU - Mattila, M.

AU - Fontaine, C.

AU - Arnoult, A.

PY - 2009/3

Y1 - 2009/3

N2 - Experimental results concerning the steady-state photoluminescence (PL) studies in n and p modulation doped and undoped GaInNAs/GaAs quantum wells are presented. The effects of modulation, type of doping and nitrogen concentration on the PL and the temperature dependence of the band gap, carrier localization and non-radiative recombination are investigated. Increasing the nitrogen composition decreases energy band gap as expected. The n-type modulation doping eliminates most of the defect-related effects and blue shifts the energy band gap. However, the p-type doping gives rise to additional features in the PL spectra and red shifts energy band gap further compared to the n-type-doped material.

AB - Experimental results concerning the steady-state photoluminescence (PL) studies in n and p modulation doped and undoped GaInNAs/GaAs quantum wells are presented. The effects of modulation, type of doping and nitrogen concentration on the PL and the temperature dependence of the band gap, carrier localization and non-radiative recombination are investigated. Increasing the nitrogen composition decreases energy band gap as expected. The n-type modulation doping eliminates most of the defect-related effects and blue shifts the energy band gap. However, the p-type doping gives rise to additional features in the PL spectra and red shifts energy band gap further compared to the n-type-doped material.

KW - GaInNAs/GaAs QWs

KW - Modulation doping

KW - Photoluminescence

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DO - 10.1016/j.mejo.2008.06.003

M3 - Article

AN - SCOPUS:61349100135

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SP - 406

EP - 409

JO - Microelectronics Journal

JF - Microelectronics Journal

IS - 3

ER -

Photoluminescence in n and p modulation-doped GaInNAs/GaAs quantum wells

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Keywords

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