Abstract
Integration of low-k into a reliable semiconductor production process remains challenging and new ideas are needed. A cryptocrystalline material with possible low-k and other applications is described. The synthesis of cryptocrystals of ammonium silicon fluoride on silicon is an important step forward for the integration of a variety of materials into advanced silicon circuits. Growing low-k dielectric layers by vapor phase etching has several advantages like no electrical contacts are needed and selective processing is possible.
Original language | English |
---|---|
Pages (from-to) | 31-34 |
Number of pages | 4 |
Journal | European Semiconductor |
Volume | 26 |
Issue number | 7 |
Publication status | Published - Jul 2004 |
Externally published | Yes |