Abstract
Photoluminescence (PL) measurements under different excitation powers were carried out at low temperature on tensile-strained In0.3Ga0.7As single wells of 6 nm with InGaAs barriers lattice matched to InP substrate. PL measurements taken at 2 K show a main emission band at 0.762 eV probably originating from a type-II transition. The insertion of an ultrathin InAs layer at In0.3Ga0.7As on In0.53Ga0.47As interface reveals an additional feature at 0.711 eV as well as an excited-state luminescence emission at high pump powers. The InAs insertion improves heterointerface quality, which was confirmed by an increase in PL intensity.
Original language | English |
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Pages (from-to) | 153-155 |
Number of pages | 3 |
Journal | Applied Physics A: Materials Science and Processing |
Volume | 71 |
Issue number | 2 |
Publication status | Published - Aug 2000 |
Externally published | Yes |