Reduced backgating effect in modulation-doped field-effect transistors by p-n junction isolation

M. B. Patil, D. Mui, S. Kalem, H. Morkoç

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1 Citation (Scopus)

Abstract

Reduced backgating in modulation-doped field-effect transistors (MODFETs) is achieved by p-n junction isolation. Before growing buffer layer for transistors, an AlGaAs p-n junction is included for isolating devices. Backgating characteristics are measured as a function of mesa depth and a dramatic reduction in backgating is observed when the mesas reach beyond the p-n junction. The dc performance of the MODFET is found to be comparable to previous results without such a p-n junction. Following this approach, great reduction in crosstalk between devices could be obtained in digital circuits.

Original languageEnglish
Pages (from-to)2417-2419
Number of pages3
JournalApplied Physics Letters
Volume53
Issue number24
DOIs
Publication statusPublished - 1988
Externally publishedYes

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