TY - JOUR
T1 - Si nanopillar arrays as possible electronic device platforms
AU - Kalem, Seref
N1 - Publisher Copyright:
© 2021 Elsevier Ltd
PY - 2021/9
Y1 - 2021/9
N2 - This paper explores the possible use of silicon nanopillars as electronic devices. The silicon nanopillars studied in this work were fabricated by electron beam lithography and by plasma ion etching of silicon wafers. The electrical and physical properties of these pillars with full width at half maximum ranging from few nanometers to 100 nm and length of few hundreds of nanometer have been investigated by time-resolwed photoluminescence, infrared spectroscopy and current-voltage characteristics. An ultrafast blue luminescence component competing with non-radiative recombination at surface defects was quantified as originating from the no-phonon recombination. This component involved two decay processes with a peak energy at around 500 nm, which have the fast component close to femtosecond time scale. The emission exhibits also a slow component in the red spectral region with a time constant in the nanosecond regime. The nanopillars have been smoothened in an attempt to passivate surface defects. The results are indicative of an increase in the lifetimes-of carriers and an enhancement in the red component of the emission with much slower sates. The presence of ultrafast decay at blue-green spectral region is suggestive of the possibility of using the silicon nanopillars as ultrafast switching devices. Silicon nanopillar arrays can also be an ideal platform in trapping and sensing chemical or biological species using diamond NV centers.
AB - This paper explores the possible use of silicon nanopillars as electronic devices. The silicon nanopillars studied in this work were fabricated by electron beam lithography and by plasma ion etching of silicon wafers. The electrical and physical properties of these pillars with full width at half maximum ranging from few nanometers to 100 nm and length of few hundreds of nanometer have been investigated by time-resolwed photoluminescence, infrared spectroscopy and current-voltage characteristics. An ultrafast blue luminescence component competing with non-radiative recombination at surface defects was quantified as originating from the no-phonon recombination. This component involved two decay processes with a peak energy at around 500 nm, which have the fast component close to femtosecond time scale. The emission exhibits also a slow component in the red spectral region with a time constant in the nanosecond regime. The nanopillars have been smoothened in an attempt to passivate surface defects. The results are indicative of an increase in the lifetimes-of carriers and an enhancement in the red component of the emission with much slower sates. The presence of ultrafast decay at blue-green spectral region is suggestive of the possibility of using the silicon nanopillars as ultrafast switching devices. Silicon nanopillar arrays can also be an ideal platform in trapping and sensing chemical or biological species using diamond NV centers.
KW - Electronic devices
KW - Physical and electrical properties
KW - Silicon nanopillar arrays
UR - http://www.scopus.com/inward/record.url?scp=85108738203&partnerID=8YFLogxK
U2 - 10.1016/j.sse.2021.108102
DO - 10.1016/j.sse.2021.108102
M3 - Article
AN - SCOPUS:85108738203
SN - 0038-1101
VL - 183
JO - Solid-State Electronics
JF - Solid-State Electronics
M1 - 108102
ER -