TY - JOUR
T1 - Structural properties of Ge-Sb-Te alloys
AU - Cinkaya, Hatun
AU - Ozturk, Adil
AU - Sirri Atilla Hasekioğlu, Arif
AU - Evren Kaya, Zahit
AU - Kalem, Seref
AU - Charpin-Nicolle, Christelle
AU - Bourgeois, Guillaume
AU - Guillaume, Nicolas
AU - Claire.Cyrille, Marie
AU - Garrione, Julien
AU - Navarro, Gabriele
AU - Nowak, Etienne
N1 - Publisher Copyright:
© 2021 Elsevier Ltd
PY - 2021/11
Y1 - 2021/11
N2 - In this work, we have investigated the structural properties of Germanium (Ge)-Antimony (Sb)-Tellurium (Te) (GST) and Ge-rich GST thin film samples. The structural properties of the films are studied after annealing temperatures from room temperature to 450 °C. We performed the annealing procedure using a heat rate of 10 °C/min to achieve the target temperature for a duration of 10 min under N2 flow. After heat treatment, we carried out X-Ray Diffraction (XRD), Fourier Infra-Red Spectroscopy (FTIR), Raman Spectroscopy and Scanning Electron Microscopy (SEM) equipped with Energy-dispersive X-ray spectroscopy (EDS) to investigate the evolution of the structure in the samples.
AB - In this work, we have investigated the structural properties of Germanium (Ge)-Antimony (Sb)-Tellurium (Te) (GST) and Ge-rich GST thin film samples. The structural properties of the films are studied after annealing temperatures from room temperature to 450 °C. We performed the annealing procedure using a heat rate of 10 °C/min to achieve the target temperature for a duration of 10 min under N2 flow. After heat treatment, we carried out X-Ray Diffraction (XRD), Fourier Infra-Red Spectroscopy (FTIR), Raman Spectroscopy and Scanning Electron Microscopy (SEM) equipped with Energy-dispersive X-ray spectroscopy (EDS) to investigate the evolution of the structure in the samples.
KW - GST
KW - Ge-rich GST
KW - Phase change materials
KW - Thermal annealing
UR - http://www.scopus.com/inward/record.url?scp=85107631649&partnerID=8YFLogxK
U2 - 10.1016/j.sse.2021.108101
DO - 10.1016/j.sse.2021.108101
M3 - Article
AN - SCOPUS:85107631649
SN - 0038-1101
VL - 185
JO - Solid-State Electronics
JF - Solid-State Electronics
M1 - 108101
ER -