Abstract
Photoluminescence (PL) above the excitation energy is observed in a single GaAs-InGaP quantum well (QW) and heterostructure as well as in a InP-GaAs superlattice (SL) and in strained layers. It is shown that sub-gap excitation (1.468 eV) of n-type δ-doped GaAs/GaInP quantum structure leads to an up-converted hot carrier PL emission with energy gains as high as 450 meV. The up-conversion energy in GaAs-InGaP heterostructures is 50 meV which is originated from the GaAs layer. In InP-GaAs SL, the sub-gap excitation results in a hot PL at 1.55 eV. It is also shown that the sub-gap excitation can be used to confirm the changes in band energies of a strained layer.
Original language | English |
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Pages (from-to) | 517-522 |
Number of pages | 6 |
Journal | Physica Status Solidi (B) Basic Research |
Volume | 221 |
Issue number | 1 |
DOIs | |
Publication status | Published - Sept 2000 |
Externally published | Yes |