Sub-gap excited photoluminescence in III-V compound semiconductor heterostructures

S. Kalem, A. Curtis, Q. Hartmann, B. Moser, G. Stillman

Research output: Contribution to journalArticlepeer-review

5 Citations (Scopus)

Abstract

Photoluminescence (PL) above the excitation energy is observed in a single GaAs-InGaP quantum well (QW) and heterostructure as well as in a InP-GaAs superlattice (SL) and in strained layers. It is shown that sub-gap excitation (1.468 eV) of n-type δ-doped GaAs/GaInP quantum structure leads to an up-converted hot carrier PL emission with energy gains as high as 450 meV. The up-conversion energy in GaAs-InGaP heterostructures is 50 meV which is originated from the GaAs layer. In InP-GaAs SL, the sub-gap excitation results in a hot PL at 1.55 eV. It is also shown that the sub-gap excitation can be used to confirm the changes in band energies of a strained layer.

Original languageEnglish
Pages (from-to)517-522
Number of pages6
JournalPhysica Status Solidi (B) Basic Research
Volume221
Issue number1
DOIs
Publication statusPublished - Sept 2000
Externally publishedYes

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