Abstract
Temperature dependent photoluminescence (PL) measurements of (NH 4)2SiF6 (ASF) structures prepared by the well known vapour etching technique are carried out for temperatures ranging from 10K to 300K. It is observed that PL peak position shifts to higher energies and the intensity is reduced as the temperature decreases.
Original language | English |
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Pages (from-to) | 610 |
Number of pages | 1 |
Journal | AIP Conference Proceedings |
Volume | 899 |
DOIs | |
Publication status | Published - 2007 |
Externally published | Yes |
Event | 6TH International Conference of the Balkan Physical Union - Istanbul, Turkey Duration: 22 Aug 2006 → 26 Aug 2007 |
Keywords
- Ammonium silicon fluoride
- Luminescence
- Vapour etching