Temperature dependent PL properties of ASF structures prepared by vapour etching technique

Ismail Kabacelik; Mukremin Yilmaz; Bulent Ulug

doi:10.1063/1.2733351

Temperature dependent PL properties of ASF structures prepared by vapour etching technique

Ismail Kabacelik, Mukremin Yilmaz, Bulent Ulug

Research output: Contribution to journal › Conference article › peer-review

Abstract

Temperature dependent photoluminescence (PL) measurements of (NH ₄)₂SiF₆ (ASF) structures prepared by the well known vapour etching technique are carried out for temperatures ranging from 10K to 300K. It is observed that PL peak position shifts to higher energies and the intensity is reduced as the temperature decreases.

Original language	English
Pages (from-to)	610
Number of pages	1
Journal	AIP Conference Proceedings
Volume	899
DOIs	https://doi.org/10.1063/1.2733351
Publication status	Published - 2007
Externally published	Yes
Event	6TH International Conference of the Balkan Physical Union - Istanbul, Turkey Duration: 22 Aug 2006 → 26 Aug 2007

Keywords

Ammonium silicon fluoride
Luminescence
Vapour etching

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10.1063/1.2733351

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title = "Temperature dependent PL properties of ASF structures prepared by vapour etching technique",

abstract = "Temperature dependent photoluminescence (PL) measurements of (NH 4)2SiF6 (ASF) structures prepared by the well known vapour etching technique are carried out for temperatures ranging from 10K to 300K. It is observed that PL peak position shifts to higher energies and the intensity is reduced as the temperature decreases.",

keywords = "Ammonium silicon fluoride, Luminescence, Vapour etching",

author = "Ismail Kabacelik and Mukremin Yilmaz and Bulent Ulug",

year = "2007",

doi = "10.1063/1.2733351",

language = "English",

volume = "899",

pages = "610",

journal = "AIP Conference Proceedings",

issn = "0094-243X",

publisher = "American Institute of Physics",

note = "6TH International Conference of the Balkan Physical Union ; Conference date: 22-08-2006 Through 26-08-2007",

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TY - JOUR

T1 - Temperature dependent PL properties of ASF structures prepared by vapour etching technique

AU - Kabacelik, Ismail

AU - Yilmaz, Mukremin

AU - Ulug, Bulent

PY - 2007

Y1 - 2007

N2 - Temperature dependent photoluminescence (PL) measurements of (NH 4)2SiF6 (ASF) structures prepared by the well known vapour etching technique are carried out for temperatures ranging from 10K to 300K. It is observed that PL peak position shifts to higher energies and the intensity is reduced as the temperature decreases.

AB - Temperature dependent photoluminescence (PL) measurements of (NH 4)2SiF6 (ASF) structures prepared by the well known vapour etching technique are carried out for temperatures ranging from 10K to 300K. It is observed that PL peak position shifts to higher energies and the intensity is reduced as the temperature decreases.

KW - Ammonium silicon fluoride

KW - Luminescence

KW - Vapour etching

UR - http://www.scopus.com/inward/record.url?scp=34547396909&partnerID=8YFLogxK

U2 - 10.1063/1.2733351

DO - 10.1063/1.2733351

M3 - Conference article

AN - SCOPUS:34547396909

SN - 0094-243X

VL - 899

SP - 610

JO - AIP Conference Proceedings

JF - AIP Conference Proceedings

T2 - 6TH International Conference of the Balkan Physical Union

Y2 - 22 August 2006 through 26 August 2007

ER -

Temperature dependent PL properties of ASF structures prepared by vapour etching technique

Abstract

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