@inproceedings{0f108c0489104257bcd275ad1939ce4d,
title = "A study of optical and electrical properties of in-rich In 1-XGaXN",
abstract = "We report the optoelectronic properties of In-rich In1-XGa XN samples grown on sapphire substrates by MBE. Optical properties were determined by photoluminescence spectroscopy at temperatures between T=10 K and 300 K. The results indicate that the PL peak energy has very weak temperature dependence and the optical absorption edge energy increases with increasing Ga content as previously reported in the literature. In this paper we suggest that this observation might be explained in terms of strong carrier localization due to a large compositional inhomogeneity. Hall measurements were also performed at temperatures between T=77 K and 300 K. All intentionally undoped samples were n-type and increasing Ga content reduced the electron mobility associated with reduced crystalline quality. The weak temperature dependence of the electron mobility is explained in terms of enhanced screening effect between electrons and optical phonons.",
keywords = "Hall measurement, InGaN, Optical phonons, Photoluminescence",
author = "M. Gunes and N. Balkan and M. Yilmaz and B. Ulug and A. Ulug and Schaff, {W. J.}",
year = "2010",
doi = "10.1063/1.3521354",
language = "English",
isbn = "9780735408432",
series = "AIP Conference Proceedings",
pages = "178--183",
booktitle = "Emerging Trends and Novel Materials in Photonics - International Commission for Optics Topical Meeting, ICO Photonics Delphi 2009",
note = "International Commission for Optics (ICO), Topical Meeting on {"}Emerging Trends and Novel Materials in Photonics{"}, ICO-Photonics-Delphi2009 ; Conference date: 07-10-2009 Through 09-10-2009",
}