Defect studies in strain-relaxed Si_1-xGe_x alloys

Keyphrases

• Phonons 100%
• Si1-xGex Alloy 100%
• Defect Study 100%
• Dislocation 75%
• D-band 75%
• Hydrogenation 50%
• Ge Content 50%
• SiGe 50%
• Scattering Tomography 50%
• Light Scattering 50%
• Raman Spectra 50%
• Photoluminescence Emission 25%
• Optical Properties 25%
• Band Gap 25%
• Luminescence Spectra 25%
• Dislocation Core 25%
• Raman Light Scattering 25%
• Si1-xGex 25%
• D2 Line 25%
• Ge Composition 25%
• Passivation 25%
• Emission Intensity 25%
• Nonradiative Recombination Center 25%
• Si Precipitate 25%
• Low-temperature Photoluminescence 25%
• Alloy Fluctuations 25%
• Luminescence Emission 25%

Engineering

• Band Emission 100%
• Hydrogenation 66%
• Raman Spectra 66%
• Low-Temperature 33%
• Emission Intensity 33%
• Dislocation Core 33%
• Rich Region 33%
• Passivation 33%
• Recombination Centre 33%
• Band Gap 33%

Material Science

• Light Scattering 100%