Özet
Re2O3 (Re = Er, Gd, Ho, Y and Yb) was prepared by sol-gel synthesis using metal-organic precursors. Residual stress and microstructure in the Re2O3 buffer layers were investigated as a function of temperature and film thickness. Textured Re 2O3 buffer layers were grown on biaxially textured-Ni (100) substrates using chemical solution deposition. Films were annealed at 1150°C under a flowing 4 % H2 - Ar gas. X-ray diffraction of the buffers showed strong out-of-plane orientation on Ni tape. Residual stress in various thicknesses of buffer layers was calculated. The surface morphologies and microstructure of all samples were characterized using SEM and AFM. ©: 2009 IEEE.
Orijinal dil | İngilizce |
---|---|
Makale numarası | 5153144 |
Sayfa (başlangıç-bitiş) | 3291-3294 |
Sayfa sayısı | 4 |
Dergi | IEEE Transactions on Applied Superconductivity |
Hacim | 19 |
Basın numarası | 3 |
DOI'lar | |
Yayın durumu | Yayınlanan - Haz 2009 |
Harici olarak yayınlandı | Evet |