Enhanced electron spin polarization in photoemission from thin GaAs

T. Maruyama; R. Prepost; E. L. Garwin; C. K. Sinclair; B. Dunham; S. Kalem

doi:10.1063/1.102236

Enhanced electron spin polarization in photoemission from thin GaAs

T. Maruyama, R. Prepost, E. L. Garwin, C. K. Sinclair, B. Dunham, S. Kalem

Araştırma sonucu: Dergi katkısı › Makale › bilirkişi

27 Alıntılar (Scopus)

Özet

The polarization of photoemitted electrons from thin GaAs layers grown by molecular beam epitaxy has been measured. Polarization as high as 49% was observed for a 0.2-μm-thick GaAs sample at excitation photon wavelengths longer than 750 nm. The maximum polarization is dependent on the thickness of the GaAs layer, decreasing to about 41% for a 0.9-μm-thick GaAs sample.

Orijinal dil	İngilizce
Sayfa (başlangıç-bitiş)	1686-1688
Sayfa sayısı	3
Dergi	Applied Physics Letters
Hacim	55
Basın numarası	16
DOI'lar	https://doi.org/10.1063/1.102236
Yayın durumu	Yayınlanan - 1989
Harici olarak yayınlandı	Evet

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10.1063/1.102236

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Bundan alıntı yap

@article{e7441568579e45a2977921d7c2a5bcc4,

title = "Enhanced electron spin polarization in photoemission from thin GaAs",

abstract = "The polarization of photoemitted electrons from thin GaAs layers grown by molecular beam epitaxy has been measured. Polarization as high as 49% was observed for a 0.2-μm-thick GaAs sample at excitation photon wavelengths longer than 750 nm. The maximum polarization is dependent on the thickness of the GaAs layer, decreasing to about 41% for a 0.9-μm-thick GaAs sample.",

author = "T. Maruyama and R. Prepost and Garwin, {E. L.} and Sinclair, {C. K.} and B. Dunham and S. Kalem",

year = "1989",

doi = "10.1063/1.102236",

language = "English",

volume = "55",

pages = "1686--1688",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics",

number = "16",

}

TY - JOUR

T1 - Enhanced electron spin polarization in photoemission from thin GaAs

AU - Maruyama, T.

AU - Prepost, R.

AU - Garwin, E. L.

AU - Sinclair, C. K.

AU - Dunham, B.

AU - Kalem, S.

PY - 1989

Y1 - 1989

N2 - The polarization of photoemitted electrons from thin GaAs layers grown by molecular beam epitaxy has been measured. Polarization as high as 49% was observed for a 0.2-μm-thick GaAs sample at excitation photon wavelengths longer than 750 nm. The maximum polarization is dependent on the thickness of the GaAs layer, decreasing to about 41% for a 0.9-μm-thick GaAs sample.

AB - The polarization of photoemitted electrons from thin GaAs layers grown by molecular beam epitaxy has been measured. Polarization as high as 49% was observed for a 0.2-μm-thick GaAs sample at excitation photon wavelengths longer than 750 nm. The maximum polarization is dependent on the thickness of the GaAs layer, decreasing to about 41% for a 0.9-μm-thick GaAs sample.

UR - http://www.scopus.com/inward/record.url?scp=36549091099&partnerID=8YFLogxK

U2 - 10.1063/1.102236

DO - 10.1063/1.102236

M3 - Article

AN - SCOPUS:36549091099

SN - 0003-6951

VL - 55

SP - 1686

EP - 1688

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 16

ER -

Enhanced electron spin polarization in photoemission from thin GaAs

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