Fabrication and characterization of TiOx based single-cell memristive devices

Keyphrases

• TiOx 100%
• Memristive Devices 100%
• Neuromorphic System 66%
• X-ray Photoelectron Spectroscopy 33%
• Human Brain 33%
• Structural Properties 33%
• Reflectivity 33%
• Electrical Properties 33%
• Rutile 33%
• Surface Roughness 33%
• Structural Defects 33%
• Electrical Transport 33%
• High-resolution 33%
• Layer Thickness 33%
• Photoluminescence Properties 33%
• Fabrication Methods 33%
• Photoluminescence Spectroscopy 33%
• Silica 33%
• Current-voltage Characteristics 33%
• Pulsed Laser Deposition 33%
• Pinched Hysteresis Loop 33%
• Transport Characterization 33%
• Quasi-static 33%
• Switching Behavior 33%
• Neuronal Synapses 33%
• Generalized Memristor 33%
• Probing Techniques 33%
• Film Stoichiometry 33%
• Metal Oxide Layers 33%
• Platinum Electrode 33%
• Memristor Model 33%
• Switching Properties 33%
• Oxidation Degree 33%
• Memristive Behavior 33%
• Two-probe 33%
• Random Access Memory 33%
• Digital Switching 33%
• All-thin-film 33%
• Pt Thin Film 33%
• Memristor-based 33%

Material Science

• Thin Films 100%
• Photoluminescence 66%
• Film 66%
• Neuromorphic Computing 66%
• Structural Property 33%
• Titanium Dioxide 33%
• Density 33%
• Reflectivity 33%
• Oxidation Reaction 33%
• Metal Oxide 33%
• Pulsed Laser Deposition 33%
• Platinum 33%
• Photoemission Spectroscopy 33%
• Surface Roughness 33%