Özet
Effects of high electron concentration on the band gap energy of InN films having different layer thicknesses as 600 and 800nm are investigated experimentally and theoretically. Electron concentrations of the samples are obtained through the Hall measurements accomplished between 77K and room temperature. Optical characterization of the samples is carried out using the photoluminescence (PL) measurements and the observed PL spectra are explained considering the high electron concentration related effects, i.e. Burstein-Moss shift, band renormalization and band tailing in non-parabolic k·p model. Extracted PL results indicate that the samples have approximately 0.685eV band gap energy at 77K. Effective mass of the carriers, which is calculated as 0.097m0 for electron concentration of ∼1019cm-3, are also observed to be influenced by the high carrier concentration.
Orijinal dil | İngilizce |
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Sayfa (başlangıç-bitiş) | 1172-1175 |
Sayfa sayısı | 4 |
Dergi | Physica Status Solidi (B) Basic Research |
Hacim | 248 |
Basın numarası | 5 |
DOI'lar | |
Yayın durumu | Yayınlanan - May 2011 |
Harici olarak yayınlandı | Evet |