Inhibition of negative differential resistance in modulation-doped n -type Gax In1-x Ny As1-y GaAs quantum wells

Y. Sun, M. P. Vaughan, A. Agarwal, M. Yilmaz, B. Ulug, A. Ulug, N. Balkan, M. Sopanen, O. Reentilä, M. Mattila, C. Fontaine, A. Arnoult

Araştırma sonucu: Dergi katkısıMakalebilirkişi

12 Alıntılar (Scopus)

Özet

We present the results of hot-electron momentum relaxation studies for longitudinal transport in modulation doped Gax In1-x Ny As1-y GaAs quantum wells. Experimental results show that the high field drift velocity saturates at a value close to 1× 107 cm s with no evidence for negative differential resistance or instabilities. Experimental results are compared with a simple theoretical model for transport taking into account the effect of nonequilibrium phonon production. Model calculations indicate that enhanced momentum scattering for electrons with nondrifting hot phonons may be the cause for the reduction in drift velocity.

Orijinal dilİngilizce
Makale numarası205316
DergiPhysical Review B - Condensed Matter and Materials Physics
Hacim75
Basın numarası20
DOI'lar
Yayın durumuYayınlanan - 11 May 2007
Harici olarak yayınlandıEvet

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