Interface structures and electrical properties of W/Si films grown by LPCVD

Yusuf Atici, M. Eyüphan Yakinci, Bülent Uluǧ, Yildirim Aydoǧdu

Araştırma sonucu: Dergi katkısıMakalebilirkişi

1 Alıntı (Scopus)

Özet

Interface structures of W films on Si(100) substrates grown by LPCVD from a mixture of WF6, H2 and SiH4 (silane) gases at 280°C have been studied by transmission electron microscopy. Cross-sectional and plan-view samples were prepared to characterize the films. Consequently, according to the growth conditions, it has been observed that the W-Si interfaces are rough on a fine scale with some more extensive W protrusions in one of the samples which had an extended initial exposure to WF6. The W films have exhibited many randomly oriented grains ranging between 1000 and 4500 Å in size. Sheet resistance measurements have also been evaluated by means of four-point contact method at low temperatures (47-300 K) and it has been detected that the sheet resistance of a film decreases as the temperature decreases.

Orijinal dilİngilizce
Sayfa (başlangıç-bitiş)753-759
Sayfa sayısı7
DergiTurkish Journal of Physics
Hacim20
Basın numarası7
Yayın durumuYayınlanan - 1996
Harici olarak yayınlandıEvet

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