Investigation of Trap States, Series Resistance and Diode Parameters in Al/Gelatin/n-Si Schottky Diode by Voltage and Frequency Dependent Capacitance and Conductance Analysis

Keyphrases

• Schottky Diode 100%
• Resistance Parameter 100%
• Gelatin 100%
• Conductance 100%
• Trap States 100%
• Voltage-dependent Capacitance 100%
• Frequency Dependent Capacitance 100%
• Diode Parameters 100%
• Capacitance 100%
• N-Si 100%
• Series Resistance 100%
• Series Diode 100%
• Diode 50%
• Si Wafer 25%
• Influential Parameters 25%
• Electronic Applications 25%
• B-value 25%
• Spin Coating Technique 25%
• Built-in Voltage 25%
• Conductance-voltage 25%
• Capacitance-conductance 25%
• Capacitance-voltage 25%
• Ionized Donor 25%
• Donor Density 25%
• Schottky 25%
• Interface States 25%
• Fermi Level 25%
• Resistive State 25%
• Materials for Electronics 25%
• Barrier Height 25%
• Basic Electrical Parameters 25%
• Forward Bias 25%
• Contact-based 25%
• Inorganic-organic 25%
• Schottky Contact 25%

Engineering

• Series Resistance 100%
• Si Wafer 50%
• Experimental Result 50%
• Promising Candidate 50%
• Coating Technique 50%
• Schottky Barrier 50%
• Frequency Increase 50%
• Interface State 50%
• Forward Bias 50%
• Barrier Height 50%
• Fermi Level 50%

Material Science

• Schottky Diode 100%
• Capacitance 100%
• Density 16%
• Spin Coating 16%
• Schottky Barrier 16%