Microscopic Si whiskers

S. Kalem; P. Werner; M. Hagberg; B. Nilsson; V. Talalaev; Ö Arthursson; H. Frederiksen; U. Södervall

doi:10.1016/j.mee.2011.02.072

Microscopic Si whiskers

S. Kalem, P. Werner, M. Hagberg, B. Nilsson, V. Talalaev, Ö Arthursson, H. Frederiksen, U. Södervall

Araştırma sonucu: Dergi katkısı › Makale › bilirkişi

2 Alıntılar (Scopus)

Özet

Physical properties of microscopic silicon whiskers formed by reactive ion etching in chlorine plasma are reported in an attempt to clarify the formation mechanism and the origin of the observed optical and electrical phenomena. The silicon whiskers with diameters of well under 5 nm exhibit strong photoluminescence (PL) both in visible and infrared, which are related to quantum confinement, near band-edge and defects. Vibrational analysis indicate that disorder induced LO-TO optical mode coupling is very effective. Electric field emission properties of these microscopic features were also investigated to determine their potential for advanced technology applications.

Orijinal dil	İngilizce
Sayfa (başlangıç-bitiş)	2593-2596
Sayfa sayısı	4
Dergi	Microelectronic Engineering
Hacim	88
Basın numarası	8
DOI'lar	https://doi.org/10.1016/j.mee.2011.02.072
Yayın durumu	Yayınlanan - Ağu 2011
Harici olarak yayınlandı	Evet

Belgeye Erişim

10.1016/j.mee.2011.02.072

Diger dosyalar ve linkler

Link to publication in Scopus

Bundan alıntı yap

@article{83eb93e7c013452dbe2e91021154f648,

title = "Microscopic Si whiskers",

abstract = "Physical properties of microscopic silicon whiskers formed by reactive ion etching in chlorine plasma are reported in an attempt to clarify the formation mechanism and the origin of the observed optical and electrical phenomena. The silicon whiskers with diameters of well under 5 nm exhibit strong photoluminescence (PL) both in visible and infrared, which are related to quantum confinement, near band-edge and defects. Vibrational analysis indicate that disorder induced LO-TO optical mode coupling is very effective. Electric field emission properties of these microscopic features were also investigated to determine their potential for advanced technology applications.",

keywords = "Black silicon, Field emission, Nanowhiskers, Nanowires, Photoluminescence, Silicon",

author = "S. Kalem and P. Werner and M. Hagberg and B. Nilsson and V. Talalaev and {\"O} Arthursson and H. Frederiksen and U. S{\"o}dervall",

year = "2011",

month = aug,

doi = "10.1016/j.mee.2011.02.072",

language = "English",

volume = "88",

pages = "2593--2596",

journal = "Microelectronic Engineering",

issn = "0167-9317",

publisher = "Elsevier B.V.",

number = "8",

}

TY - JOUR

T1 - Microscopic Si whiskers

AU - Kalem, S.

AU - Werner, P.

AU - Hagberg, M.

AU - Nilsson, B.

AU - Talalaev, V.

AU - Arthursson, Ö

AU - Frederiksen, H.

AU - Södervall, U.

PY - 2011/8

Y1 - 2011/8

N2 - Physical properties of microscopic silicon whiskers formed by reactive ion etching in chlorine plasma are reported in an attempt to clarify the formation mechanism and the origin of the observed optical and electrical phenomena. The silicon whiskers with diameters of well under 5 nm exhibit strong photoluminescence (PL) both in visible and infrared, which are related to quantum confinement, near band-edge and defects. Vibrational analysis indicate that disorder induced LO-TO optical mode coupling is very effective. Electric field emission properties of these microscopic features were also investigated to determine their potential for advanced technology applications.

AB - Physical properties of microscopic silicon whiskers formed by reactive ion etching in chlorine plasma are reported in an attempt to clarify the formation mechanism and the origin of the observed optical and electrical phenomena. The silicon whiskers with diameters of well under 5 nm exhibit strong photoluminescence (PL) both in visible and infrared, which are related to quantum confinement, near band-edge and defects. Vibrational analysis indicate that disorder induced LO-TO optical mode coupling is very effective. Electric field emission properties of these microscopic features were also investigated to determine their potential for advanced technology applications.

KW - Black silicon

KW - Field emission

KW - Nanowhiskers

KW - Nanowires

KW - Photoluminescence

KW - Silicon

UR - http://www.scopus.com/inward/record.url?scp=79960060745&partnerID=8YFLogxK

U2 - 10.1016/j.mee.2011.02.072

DO - 10.1016/j.mee.2011.02.072

M3 - Article

AN - SCOPUS:79960060745

SN - 0167-9317

VL - 88

SP - 2593

EP - 2596

JO - Microelectronic Engineering

JF - Microelectronic Engineering

IS - 8

ER -

Microscopic Si whiskers

Özet

Belgeye Erişim

Diger dosyalar ve linkler

Parmak izi

Bundan alıntı yap