Optical and electrical properties of modulation-doped n and p-type Ga x In 1-x N y As 1-y /GaAs quantum wells for 1.3 μm laser applications

Y. Sun, A. Erol, M. Yilmaz, M. C. Arikan, B. Ulug, A. Ulug, N. Balkan, M. Sopanen, O. Reentilä, M. Mattila, C. Fontaine, A. Arnoult

Araştırma sonucu: Dergi katkısıMakalebilirkişi

14 Alıntılar (Scopus)

Özet

We present a comprehensive study of spectral photoluminescence (PL), photoconductivity and Hall mobility in undoped, n and p-type modulation-doped quantum wells of Ga 1-x In x N y As 1-y /GaAs with varying nitrogen concentration. We show that the increasing nitrogen composition red shifts the energy gap and this red shift is accompanied with a reduction of the 2D electron mobility in the quantum wells. True temperature dependence of the band gap, free from errors associated with nitrogen induced exciton trapping effects, is observed because in the modulation doped QW samples PL emission is dominated by band-to-band recombination and the S-shape temperature dependence is eliminated. Excellent fit to semi-experimental Varshni equation is obtained and the temperature dependence of the band gap in the linear regime (dE/dT) is tabulated as a function of nitrogen concentration and the type of dopant.

Orijinal dilİngilizce
Sayfa (başlangıç-bitiş)467-474
Sayfa sayısı8
DergiOptical and Quantum Electronics
Hacim40
Basın numarası7
DOI'lar
Yayın durumuYayınlanan - May 2008
Harici olarak yayınlandıEvet

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