Possibility of fabricating light-emitting porous silicon from gas phase etchants

We present a new technique for porous semiconductor formation which is based on the exposure of semiconductor surfaces to gas phase etchants. The technique offers the possibility of fabricating light-emitting devices by selectively exposing a silicon surface to HF vapor. Photoluminescence measurements reveal an efficient emission at around 750 nm. FTIR analysis confirm the existence of strong hydrogen incorporation and oxidation as evidenced from the local bonding environment of hydrogen and oxygen atoms.